TPH5R906NH,L1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 28A 8SOP
$1.64
Available to order
Reference Price (USD)
5,000+
$0.70700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with TPH5R906NH,L1Q, a reliable Transistors - FETs, MOSFETs - Single by Toshiba Semiconductor and Storage. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, TPH5R906NH,L1Q meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.9mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 4V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP Advance (5x5)
- Package / Case: 8-PowerVDFN
Related Products
STMicroelectronics
STD100N10F7
onsemi
MTV32N20E
Microchip Technology
APT10025JVR
Infineon Technologies
IPD35N12S3L24ATMA1
Diodes Incorporated
DMN1045UFR4-7
STMicroelectronics
STB36NM60ND
Rectron USA
RM5N700IP
onsemi
NVH4L022N120M3S
Alpha & Omega Semiconductor Inc.
AOT430
PN Junction Semiconductor