TSM033NB04LCR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 40V 21A/121A 8PDFN
$1.58
Available to order
Reference Price (USD)
2,500+
$0.81914
Exquisite packaging
Discount
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Optimize your electronic systems with TSM033NB04LCR RLG, a high-quality Transistors - FETs, MOSFETs - Single from Taiwan Semiconductor Corporation. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, TSM033NB04LCR RLG provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4456 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (5x6)
- Package / Case: 8-PowerTDFN
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