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TSM60NB1R4CP ROG

Taiwan Semiconductor Corporation
TSM60NB1R4CP ROG Preview
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 600V 3A TO252
$1.14
Available to order
Reference Price (USD)
1,875+
$0.38430
3,750+
$0.35868
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.12 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 257.3 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 28.4W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252, (D-Pak)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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