UMD6NTR
Rohm Semiconductor
Rohm Semiconductor
TRANS NPN/PNP PREBIAS 0.15W UMT6
$0.45
Available to order
Reference Price (USD)
3,000+
$0.08100
6,000+
$0.07650
15,000+
$0.06975
30,000+
$0.06525
75,000+
$0.06300
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize circuit reliability with Rohm Semiconductor's UMD6NTR Pre-Biased Transistor Arrays, the smart choice for modern electronic designs. These BJT arrays combine multiple transistors with bias networks in single packages, offering space savings and improved thermal characteristics. Target applications span from portable electronics to industrial automation systems, particularly where stable amplification and fast switching are required. Key benefits include reduced component count, simplified assembly processes, and enhanced signal integrity. Rohm Semiconductor maintains strict quality control measures for all discrete semiconductor products. Interested in UMD6NTR specifications or evaluation boards? Complete our brief inquiry form for prompt response!
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: UMT6
Related Products
onsemi
NSBC123JPDP6T5G
Toshiba Semiconductor and Storage
RN1605TE85LF
Nexperia USA Inc.
NHUMD10F
Infineon Technologies
BCR10PNH6730XTMA1
onsemi
NSVBC114EDXV6T1G
Diodes Incorporated
ADA114YUQ-13
Toshiba Semiconductor and Storage
RN1968(TE85L,F)
Rohm Semiconductor
QSH29TR
Micro Commercial Co
UMH2N-TP
Toshiba Semiconductor and Storage