UMH10NTN
Rohm Semiconductor
Rohm Semiconductor
TRANS 2NPN PREBIAS 0.15W UMT6
$0.45
Available to order
Reference Price (USD)
3,000+
$0.08100
6,000+
$0.07650
15,000+
$0.06975
30,000+
$0.06525
75,000+
$0.06300
Exquisite packaging
Discount
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Optimize your electronic designs with Rohm Semiconductor's UMH10NTN BJT Array solution, offering pre-configured biasing for immediate implementation. These transistor arrays excel in switching and linear applications where space and efficiency are critical. The product series demonstrates superior characteristics: thermal shutdown protection, high-frequency response, and ESD protection for durable performance. Commonly deployed in battery-powered devices, motor controllers, and audio amplifiers across multiple industries. Rohm Semiconductor combines decades of semiconductor experience with cutting-edge manufacturing techniques. Don't compromise on quality request samples or volume pricing for UMH10NTN through our quick inquiry system!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 2.2kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: UMT6
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