UMH11NTN
Rohm Semiconductor

Rohm Semiconductor
TRANS 2NPN PREBIAS 0.15W UMT6
$0.48
Available to order
Reference Price (USD)
3,000+
$0.08640
6,000+
$0.08160
15,000+
$0.07440
30,000+
$0.06960
75,000+
$0.06720
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize circuit reliability with Rohm Semiconductor's UMH11NTN Pre-Biased Transistor Arrays, the smart choice for modern electronic designs. These BJT arrays combine multiple transistors with bias networks in single packages, offering space savings and improved thermal characteristics. Target applications span from portable electronics to industrial automation systems, particularly where stable amplification and fast switching are required. Key benefits include reduced component count, simplified assembly processes, and enhanced signal integrity. Rohm Semiconductor maintains strict quality control measures for all discrete semiconductor products. Interested in UMH11NTN specifications or evaluation boards? Complete our brief inquiry form for prompt response!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: UMT6