UPA651TT-E1-A
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 20V 5A 6WSOF
$0.29
Available to order
Reference Price (USD)
1+
$0.29000
500+
$0.2871
1000+
$0.2842
1500+
$0.2813
2000+
$0.2784
2500+
$0.2755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
UPA651TT-E1-A by Renesas Electronics America Inc is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, UPA651TT-E1-A ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 69mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WSOF
- Package / Case: 6-SMD, Flat Leads
Related Products
onsemi
NVMFS4C03NT1G
Infineon Technologies
IRFZ44NSTRLPBF
Diodes Incorporated
DMTH10H072LPS-13
IXYS
IXFN110N85X
IXYS
IXFN74N100X
Infineon Technologies
IPB042N10N3GATMA1
Microchip Technology
VN3205N3-G
Rohm Semiconductor
RUE003N02TL
NXP USA Inc.
BUK653R5-55C,127
Nexperia USA Inc.