ZVP3310FTA
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 100V 75MA SOT23-3
$0.53
Available to order
Reference Price (USD)
3,000+
$0.20003
6,000+
$0.18848
15,000+
$0.17693
30,000+
$0.16884
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with ZVP3310FTA, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, ZVP3310FTA meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 75mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 330mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Rohm Semiconductor
R5009FNX
Nexperia USA Inc.
PMPB11EN,115
Vishay Siliconix
SIJ128LDP-T1-GE3
Infineon Technologies
IPD60R600P6ATMA1
Infineon Technologies
IRFB4610PBF
Vishay Siliconix
SIHB33N60E-GE3
Panjit International Inc.
PJD4NA50A_L2_00001
Vishay Siliconix
SIHP21N80AEF-GE3
Infineon Technologies
AUIRFR4620TRL
onsemi