ZXMN20B28KTC
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 200V 1.5A TO252-3
$0.82
Available to order
Reference Price (USD)
2,500+
$0.34105
5,000+
$0.32015
12,500+
$0.30970
25,000+
$0.30400
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose ZXMN20B28KTC by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with ZXMN20B28KTC inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 750mOhm @ 2.75A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 358 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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