ZXMP4A57E6QTA
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 31V~40V SOT26 T&R
$0.30
Available to order
Reference Price (USD)
1+
$0.30480
500+
$0.301752
1000+
$0.298704
1500+
$0.295656
2000+
$0.292608
2500+
$0.28956
Exquisite packaging
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Discover ZXMP4A57E6QTA, a versatile Transistors - FETs, MOSFETs - Single solution from Diodes Incorporated, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 833 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 1.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-26
- Package / Case: SOT-23-6
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