ZXMP6A18KQTC
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V TO252 T&R
$0.60
Available to order
Reference Price (USD)
1+
$0.60368
500+
$0.5976432
1000+
$0.5916064
1500+
$0.5855696
2000+
$0.5795328
2500+
$0.573496
Exquisite packaging
Discount
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Upgrade your electronic designs with ZXMP6A18KQTC by Diodes Incorporated, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, ZXMP6A18KQTC ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 55mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.15W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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