APT28M120B2
Microchip Technology
Microchip Technology
MOSFET N-CH 1200V 29A T-MAX
$24.63
Available to order
Reference Price (USD)
1+
$22.91000
10+
$21.19100
100+
$18.09830
500+
$16.03644
Exquisite packaging
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Boost your electronic applications with APT28M120B2, a reliable Transistors - FETs, MOSFETs - Single by Microchip Technology. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, APT28M120B2 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 560mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 9670 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1135W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX™ [B2]
- Package / Case: TO-247-3 Variant
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