BSP322PL6327HTSA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 100V 1A SOT223-4
$0.19
Available to order
Reference Price (USD)
1+
$0.19000
500+
$0.1881
1000+
$0.1862
1500+
$0.1843
2000+
$0.1824
2500+
$0.1805
Exquisite packaging
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Boost your electronic applications with BSP322PL6327HTSA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, BSP322PL6327HTSA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 800mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id: 1V @ 380µA
- Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4-21
- Package / Case: TO-261-4, TO-261AA
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