BUK7E1R8-40E,127
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 40V 120A I2PAK
$1.14
Available to order
Reference Price (USD)
1+
$3.34000
50+
$2.69740
100+
$2.42770
500+
$1.88824
1,000+
$1.56454
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover BUK7E1R8-40E,127, a versatile Transistors - FETs, MOSFETs - Single solution from Nexperia USA Inc., a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11340 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 349W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
onsemi
NTMFS4847NAT1G
Infineon Technologies
IRLU3110ZPBF
Alpha & Omega Semiconductor Inc.
AOD424
Rectron USA
RM11N800TI
UnitedSiC
UF3C120080K4S
Renesas Electronics America Inc
RJK0329DPB-01#J0
IXYS
IXFK220N17T2
Panjit International Inc.
PJA3413_R1_00001
Infineon Technologies
IPD50R2K0CEAUMA1
Vishay Siliconix