BUK9Y25-60E,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 34A LFPAK56
$1.00
Available to order
Reference Price (USD)
1,500+
$0.25245
3,000+
$0.23018
7,500+
$0.21533
10,500+
$0.20048
37,500+
$0.19008
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with BUK9Y25-60E,115 by Nexperia USA Inc., a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, BUK9Y25-60E,115 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 21.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
Related Products
Infineon Technologies
IPD048N06L3GATMA1
Diodes Incorporated
BSS84W-7-F
IXYS
IXKC23N60C5
onsemi
FDT86246
Fairchild Semiconductor
FQPF20N06
onsemi
FDD120AN15A0
IXYS
IXFK170N20P
STMicroelectronics
STW27N60M2-EP
STMicroelectronics
STB13N60M2
onsemi