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C2M0280120D

Wolfspeed, Inc.
C2M0280120D Preview
Wolfspeed, Inc.
SICFET N-CH 1200V 10A TO247-3
$9.04
Available to order
Reference Price (USD)
1+
$5.70000
Exquisite packaging
Discount
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Specifications

  • Product Status: Not For New Designs
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Rds On (Max) @ Id, Vgs: 370mOhm @ 6A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 1.25mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 20 V
  • Vgs (Max): +25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds: 259 pF @ 1000 V
  • FET Feature: -
  • Power Dissipation (Max): 62.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3

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