SI8806DB-T2-E1
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 12V 4MICROFOOT
$0.48
Available to order
Reference Price (USD)
3,000+
$0.18050
6,000+
$0.16950
15,000+
$0.15850
30,000+
$0.15080
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover SI8806DB-T2-E1, a versatile Transistors - FETs, MOSFETs - Single solution from Vishay Siliconix, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 43mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-Microfoot
- Package / Case: 4-XFBGA
Related Products
Vishay Siliconix
SI7489DP-T1-GE3
onsemi
FDP030N06B-F102
Diodes Incorporated
DMG4468LK3-13
onsemi
SFT1341-W
onsemi
SCH1434-TL-H
Vishay Siliconix
SI7322DN-T1-E3
onsemi
NTMS5838NLR2G
IXYS
IXFP3N120
Diodes Incorporated
DMN4800LSSQ-13
onsemi