CSD18532NQ5BT
Texas Instruments
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
$3.08
Available to order
Reference Price (USD)
250+
$1.62000
500+
$1.41750
750+
$1.27980
1,250+
$1.17450
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose CSD18532NQ5BT by Texas Instruments. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with CSD18532NQ5BT inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5340 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 156W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON-CLIP (5x6)
- Package / Case: 8-PowerTDFN
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