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CSD25304W1015T

Texas Instruments
CSD25304W1015T Preview
Texas Instruments
MOSFET P-CH 20V 3A 6DSBGA
$1.17
Available to order
Reference Price (USD)
250+
$0.37364
500+
$0.31726
750+
$0.27496
1,250+
$0.24675
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 32.5mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.15V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 750mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-DSBGA (1x1.5)
  • Package / Case: 6-UFBGA, DSBGA

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