DDA114EUQ-7-F
Diodes Incorporated
Diodes Incorporated
PREBIAS TRANSISTOR SOT363 T&R 3K
$0.07
Available to order
Reference Price (USD)
1+
$0.06753
500+
$0.0668547
1000+
$0.0661794
1500+
$0.0655041
2000+
$0.0648288
2500+
$0.0641535
Exquisite packaging
Discount
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Upgrade to Diodes Incorporated's premium DDA114EUQ-7-F BJT Arrays for unmatched performance in discrete semiconductor applications. These pre-biased transistor pairs deliver consistent results in amplification and switching tasks, featuring optimized base-emitter resistors for immediate circuit integration. Perfect for use in voltage regulators, relay drivers, and signal conditioning circuits within consumer electronics and embedded systems. The product line boasts high power dissipation, wide operating temperature ranges, and moisture-resistant packaging. As an industry leader, Diodes Incorporated provides technical documentation and design support for all DDA114EUQ-7-F applications. Start your order process submit an inquiry to receive customized solutions!
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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