DMG6602SVT-7
Diodes Incorporated
Diodes Incorporated
MOSFET N/P-CH 30V TSOT23-6
$0.42
Available to order
Reference Price (USD)
3,000+
$0.10560
6,000+
$0.09592
15,000+
$0.08624
30,000+
$0.08140
75,000+
$0.07317
150,000+
$0.07075
Exquisite packaging
Discount
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Enhance your electronic applications with Diodes Incorporated s DMG6602SVT-7, a leading product in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are known for their high-speed performance, low energy consumption, and robust design. Perfect for use in switching regulators, audio systems, and communication devices. Discover the benefits of DMG6602SVT-7 today get in touch with us for a detailed quote and technical support.
Specifications
- Product Status: Not For New Designs
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.8A
- Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
- Power - Max: 840mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: TSOT-26
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