DMN3028LQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT23 T&R
$0.15
Available to order
Reference Price (USD)
1+
$0.15330
500+
$0.151767
1000+
$0.150234
1500+
$0.148701
2000+
$0.147168
2500+
$0.145635
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of DMN3028LQ-13, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, DMN3028LQ-13 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 860mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Diodes Incorporated
DMP4015SSS-13
Toshiba Semiconductor and Storage
TK5A60D(STA4,Q,M)
IXYS
IXFL210N30P3
Infineon Technologies
IPB120N08S404ATMA1
Rohm Semiconductor
RSH065N06TB1
Toshiba Semiconductor and Storage
TK20E60W,S1VX
Alpha & Omega Semiconductor Inc.
AOW7S65
Diodes Incorporated
DMN2005K-7
Nexperia USA Inc.
PMZ320UPEYL
Fairchild Semiconductor