TK5A60D(STA4,Q,M)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 5A TO220SIS
$1.39
Available to order
Reference Price (USD)
50+
$1.26560
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover TK5A60D(STA4,Q,M), a versatile Transistors - FETs, MOSFETs - Single solution from Toshiba Semiconductor and Storage, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
Related Products
IXYS
IXFL210N30P3
Infineon Technologies
IPB120N08S404ATMA1
Rohm Semiconductor
RSH065N06TB1
Toshiba Semiconductor and Storage
TK20E60W,S1VX
Alpha & Omega Semiconductor Inc.
AOW7S65
Diodes Incorporated
DMN2005K-7
Nexperia USA Inc.
PMZ320UPEYL
Fairchild Semiconductor
FQA6N70
onsemi
FDC604P
Vishay Siliconix