DMT10H015SK3-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V 54A TO252
$0.45
Available to order
Reference Price (USD)
1+
$0.45338
500+
$0.4488462
1000+
$0.4443124
1500+
$0.4397786
2000+
$0.4352448
2500+
$0.430711
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with DMT10H015SK3-13, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMT10H015SK3-13 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IPD65R1K0CEAUMA1
Vishay Siliconix
IRF520PBF-BE3
Nexperia USA Inc.
BUK9Y25-60E,115
Infineon Technologies
IPD048N06L3GATMA1
Diodes Incorporated
BSS84W-7-F
IXYS
IXKC23N60C5
onsemi
FDT86246
Fairchild Semiconductor
FQPF20N06
onsemi
FDD120AN15A0
IXYS