EMB3T2R
Rohm Semiconductor
Rohm Semiconductor
TRANS 2PNP PREBIAS 0.15W EMT6
$0.39
Available to order
Reference Price (USD)
8,000+
$0.06462
16,000+
$0.05744
24,000+
$0.05385
56,000+
$0.05026
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade to Rohm Semiconductor's premium EMB3T2R BJT Arrays for unmatched performance in discrete semiconductor applications. These pre-biased transistor pairs deliver consistent results in amplification and switching tasks, featuring optimized base-emitter resistors for immediate circuit integration. Perfect for use in voltage regulators, relay drivers, and signal conditioning circuits within consumer electronics and embedded systems. The product line boasts high power dissipation, wide operating temperature ranges, and moisture-resistant packaging. As an industry leader, Rohm Semiconductor provides technical documentation and design support for all EMB3T2R applications. Start your order process submit an inquiry to receive customized solutions!
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 5mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
Related Products
Toshiba Semiconductor and Storage
RN1906FE,LF(CT
Toshiba Semiconductor and Storage
RN4908,LF(CT
Infineon Technologies
BCR185SH6327
Panasonic Electronic Components
UP0339700L
onsemi
NSBA123JDP6T5G
Panasonic Electronic Components
UP03397G0L
onsemi
NSM21356DW6T1G
Nexperia USA Inc.
PEMH4,115
Rohm Semiconductor
UMH33NTN
onsemi