FDB031N08
onsemi
onsemi
MOSFET N-CH 75V 120A D2PAK
$7.03
Available to order
Reference Price (USD)
800+
$3.24163
1,600+
$3.03669
2,400+
$2.89324
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose FDB031N08 by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with FDB031N08 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 15160 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
onsemi
MCH3382-TL-H
Vishay Siliconix
IRF730SPBF
IXYS
IXTH102N15T
IXYS
IXFQ90N20X3
Rohm Semiconductor
SCT3040KLHRC11
onsemi
FCA16N60N
STMicroelectronics
STL120N4F6AG
Infineon Technologies
AUIRFP4110
Infineon Technologies
IPU60R3K4CEAKMA1
Linear Integrated Systems, Inc.