FII24N17AH1
IXYS
IXYS
IGBT H BRIDGE 1700V 18A I4PAK5
$0.00
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Reference Price (USD)
25+
$34.50720
Exquisite packaging
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The FII24N17AH1 by IXYS represents next-generation IGBT array technology for mission-critical applications. From medical imaging equipment to smart grid infrastructure, these transistors provide: ultra-low switching losses, high junction temperature operation, and gate charge optimization. Choose IXYS for semiconductors that outperform in harsh environments. Our technical team awaits your inquiry!
Specifications
- Product Status: Active
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 18 A
- Power - Max: 140 W
- Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 2.4 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac™-5
- Supplier Device Package: ISOPLUS i4-PAC™