FQB32N12V2TM
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 120V 32A D2PAK
$1.14
Available to order
Reference Price (USD)
1+
$1.14000
500+
$1.1286
1000+
$1.1172
1500+
$1.1058
2000+
$1.0944
2500+
$1.083
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
FQB32N12V2TM by Fairchild Semiconductor is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, FQB32N12V2TM ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.75W (Ta), 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Fairchild Semiconductor
FQP5N50C
Central Semiconductor Corp
CEDM7001 TR PBFREE
Fairchild Semiconductor
FQA35N40
Infineon Technologies
IMBG120R350M1HXTMA1
Infineon Technologies
BTS244ZE3062ANTMA1
IXYS
VMO580-02F
Infineon Technologies
BSS119NH6327XTSA1
Vishay Siliconix
SI6415DQ-T1-GE3
Vishay Siliconix
SI1401EDH-T1-BE3
Panjit International Inc.