FQB9P25TM
onsemi
onsemi
MOSFET P-CH 250V 9.4A D2PAK
$1.59
Available to order
Reference Price (USD)
1+
$1.59000
500+
$1.5741
1000+
$1.5582
1500+
$1.5423
2000+
$1.5264
2500+
$1.5105
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of FQB9P25TM, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, FQB9P25TM is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Last Time Buy
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 620mOhm @ 4.7A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.13W (Ta), 120W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Texas Instruments
CSD17313Q2Q1
Taiwan Semiconductor Corporation
TSM60NB600CH C5G
Diodes Incorporated
DMP6250SEQ-13
Alpha & Omega Semiconductor Inc.
AON7140
Rectron USA
RM8N700TI
Infineon Technologies
IPD70R600P7SAUMA1
onsemi
ECH8402-TL-E
Fairchild Semiconductor
FQD8N25TF
IXYS
IXFT120N30X3HV
Infineon Technologies