HGT1S10N120BNST
onsemi
onsemi
IGBT 1200V 35A 298W TO263AB
$2.85
Available to order
Reference Price (USD)
800+
$1.89606
1,600+
$1.61366
2,400+
$1.54125
Exquisite packaging
Discount
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Enhance your electronic designs with HGT1S10N120BNST Single IGBTs from onsemi, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. onsemi's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 35 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
- Power - Max: 298 W
- Switching Energy: 320µJ (on), 800µJ (off)
- Input Type: Standard
- Gate Charge: 100 nC
- Td (on/off) @ 25°C: 23ns/165ns
- Test Condition: 960V, 10A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK (TO-263)
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