HGTG20N60B3
Harris Corporation
Harris Corporation
N-CHANNEL IGBT
$3.31
Available to order
Reference Price (USD)
1+
$5.04000
10+
$4.52800
450+
$3.51962
900+
$3.15814
1,350+
$2.66350
Exquisite packaging
Discount
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Choose HGTG20N60B3 Single IGBTs by Harris Corporation for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Harris Corporation's reputation for quality makes HGTG20N60B3 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
- Power - Max: 165 W
- Switching Energy: 475µJ (on), 1.05mJ (off)
- Input Type: Standard
- Gate Charge: 80 nC
- Td (on/off) @ 25°C: -
- Test Condition: 480V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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