IGB03N120H2ATMA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 9.6A 62.5W TO263-3
$1.33
Available to order
Reference Price (USD)
1,000+
$0.96648
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize power control with IGB03N120H2ATMA1 Single IGBTs from Infineon Technologies, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Infineon Technologies ensures IGB03N120H2ATMA1 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Last Time Buy
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 9.6 A
- Current - Collector Pulsed (Icm): 9.9 A
- Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
- Power - Max: 62.5 W
- Switching Energy: 290µJ
- Input Type: Standard
- Gate Charge: 22 nC
- Td (on/off) @ 25°C: 9.2ns/281ns
- Test Condition: 800V, 3A, 82Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
Related Products
IXYS
IXXX200N60C3
onsemi
NGB8202NT4G
onsemi
NGTB30N65IHL2WG
Infineon Technologies
SKB15N60
STMicroelectronics
STGW40H65DFB
onsemi
FGHL40T65MQD
onsemi
ISL9V3040P3
onsemi
NGTB40N65IHL2WG
Infineon Technologies
IRGS4615DPBF
Alpha & Omega Semiconductor Inc.