STGW40H65DFB
STMicroelectronics
STMicroelectronics
IGBT 650V 80A 283W TO-247
$5.06
Available to order
Reference Price (USD)
1+
$4.31000
30+
$3.70133
120+
$3.24442
510+
$2.80286
1,020+
$2.40700
2,520+
$2.30550
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The STGW40H65DFB Single IGBT from STMicroelectronics delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. STMicroelectronics's commitment to innovation ensures STGW40H65DFB meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 283 W
- Switching Energy: 498µJ (on), 363µJ (off)
- Input Type: Standard
- Gate Charge: 210 nC
- Td (on/off) @ 25°C: 40ns/142ns
- Test Condition: 400V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr): 62 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
Related Products
onsemi
FGHL40T65MQD
onsemi
ISL9V3040P3
onsemi
NGTB40N65IHL2WG
Infineon Technologies
IRGS4615DPBF
Alpha & Omega Semiconductor Inc.
AOK20B120D1
Microchip Technology
APT65GP60L2DQ2G
Infineon Technologies
IGB50N65H5ATMA1
onsemi
FGD3245G2-F085
Infineon Technologies
IKD15N60RC2ATMA1
onsemi