NGTB30N65IHL2WG
onsemi
onsemi
IGBT TRENCH/FS 650V 60A TO247-3
$3.17
Available to order
Reference Price (USD)
120+
$3.46275
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance NGTB30N65IHL2WG Single IGBTs from onsemi, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, NGTB30N65IHL2WG ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
- Power - Max: 300 W
- Switching Energy: 200µJ (off)
- Input Type: Standard
- Gate Charge: 135 nC
- Td (on/off) @ 25°C: -/145ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 430 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
Related Products
Infineon Technologies
SKB15N60
STMicroelectronics
STGW40H65DFB
onsemi
FGHL40T65MQD
onsemi
ISL9V3040P3
onsemi
NGTB40N65IHL2WG
Infineon Technologies
IRGS4615DPBF
Alpha & Omega Semiconductor Inc.
AOK20B120D1
Microchip Technology
APT65GP60L2DQ2G
Infineon Technologies
IGB50N65H5ATMA1
onsemi