IGW15T120
Infineon Technologies
Infineon Technologies
IGW15T120 - DISCRETE IGBT WITHOU
$2.04
Available to order
Reference Price (USD)
1+
$2.04000
500+
$2.0196
1000+
$1.9992
1500+
$1.9788
2000+
$1.9584
2500+
$1.938
Exquisite packaging
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Choose IGW15T120 Single IGBTs by Infineon Technologies for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Infineon Technologies's reputation for quality makes IGW15T120 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
- Power - Max: 110 W
- Switching Energy: 1.3mJ (on), 1.4mJ (off)
- Input Type: Standard
- Gate Charge: 85 nC
- Td (on/off) @ 25°C: 50ns/520ns
- Test Condition: 600V, 15A, 56Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-21
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