SGB07N120ATMA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 16.5A 125W TO263-3-2
$3.00
Available to order
Reference Price (USD)
1,000+
$1.90865
Exquisite packaging
Discount
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Enhance your electronic designs with SGB07N120ATMA1 Single IGBTs from Infineon Technologies, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. Infineon Technologies's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Last Time Buy
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 16.5 A
- Current - Collector Pulsed (Icm): 27 A
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 8A
- Power - Max: 125 W
- Switching Energy: 1mJ
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 27ns/440ns
- Test Condition: 800V, 8A, 47Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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