IXXP12N65B4D1
IXYS
IXYS
IGBT
$2.69
Available to order
Reference Price (USD)
50+
$2.43340
Exquisite packaging
Discount
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Choose IXXP12N65B4D1 Single IGBTs by IXYS for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. IXYS's reputation for quality makes IXXP12N65B4D1 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 38 A
- Current - Collector Pulsed (Icm): 70 A
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 12A
- Power - Max: 160 W
- Switching Energy: 440µJ (on), 220µJ (off)
- Input Type: Standard
- Gate Charge: 34 nC
- Td (on/off) @ 25°C: 13ns/158ns
- Test Condition: 400V, 12A, 20Ohm, 15V
- Reverse Recovery Time (trr): 43 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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