RGTV60TK65GVC11
Rohm Semiconductor
Rohm Semiconductor
650V 30A FIELD STOP TRENCH IGBT
$5.91
Available to order
Reference Price (USD)
1+
$5.11000
10+
$4.59300
25+
$4.34240
100+
$3.76350
450+
$3.57051
900+
$3.20380
1,350+
$2.70200
Exquisite packaging
Discount
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Discover high-performance RGTV60TK65GVC11 Single IGBTs from Rohm Semiconductor, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, RGTV60TK65GVC11 ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 33 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
- Power - Max: 76 W
- Switching Energy: 570µJ (on), 500µJ (off)
- Input Type: Standard
- Gate Charge: 64 nC
- Td (on/off) @ 25°C: 33ns/105ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PFM, SC-93-3
- Supplier Device Package: TO-3PFM
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