RGT8TM65DGC9
Rohm Semiconductor
Rohm Semiconductor
FIELD STOP TRENCH IGBT
$2.10
Available to order
Reference Price (USD)
1+
$2.10000
500+
$2.079
1000+
$2.058
1500+
$2.037
2000+
$2.016
2500+
$1.995
Exquisite packaging
Discount
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The RGT8TM65DGC9 Single IGBT from Rohm Semiconductor redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. Rohm Semiconductor stands behind every RGT8TM65DGC9 with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 5 A
- Current - Collector Pulsed (Icm): 12 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
- Power - Max: 16 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 13.5 nC
- Td (on/off) @ 25°C: 17ns/69ns
- Test Condition: 400V, 4A, 50Ohm, 15V
- Reverse Recovery Time (trr): 40 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220NFM
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