IKP08N65H5XKSA1
Infineon Technologies
Infineon Technologies
IGBT 650V 18A TO220-3
$2.48
Available to order
Reference Price (USD)
1+
$2.24000
10+
$2.01500
100+
$1.61940
500+
$1.33054
1,000+
$1.10244
Exquisite packaging
Discount
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Optimize power control with IKP08N65H5XKSA1 Single IGBTs from Infineon Technologies, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Infineon Technologies ensures IKP08N65H5XKSA1 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 18 A
- Current - Collector Pulsed (Icm): 24 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
- Power - Max: 70 W
- Switching Energy: 70µJ (on), 30µJ (off)
- Input Type: Standard
- Gate Charge: 22 nC
- Td (on/off) @ 25°C: 11ns/115ns
- Test Condition: 400V, 4A, 48Ohm, 15V
- Reverse Recovery Time (trr): 40 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: PG-TO220-3-111
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