IKP39N65ES5XKSA1
Infineon Technologies
Infineon Technologies
IGBT 650V 39A TO220-3
$4.04
Available to order
Reference Price (USD)
1+
$4.04000
500+
$3.9996
1000+
$3.9592
1500+
$3.9188
2000+
$3.8784
2500+
$3.838
Exquisite packaging
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Choose IKP39N65ES5XKSA1 Single IGBTs by Infineon Technologies for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Infineon Technologies's reputation for quality makes IKP39N65ES5XKSA1 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 62 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 39A
- Power - Max: 188 W
- Switching Energy: 800µJ (on), 500µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 20ns/120ns
- Test Condition: 400V, 39A, 12.8Ohm, 15V
- Reverse Recovery Time (trr): 84 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: PG-TO220-3
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