STGW80H65DFB-4
STMicroelectronics
STMicroelectronics
IGBT BIPO 650V 80A TO247
$5.72
Available to order
Reference Price (USD)
600+
$9.93250
Exquisite packaging
Discount
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Choose STGW80H65DFB-4 Single IGBTs by STMicroelectronics for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. STMicroelectronics's reputation for quality makes STGW80H65DFB-4 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
- Power - Max: 469 W
- Switching Energy: 2.1mJ (on), 1.5mJ (off)
- Input Type: Standard
- Gate Charge: 414 nC
- Td (on/off) @ 25°C: 84ns/280ns
- Test Condition: 400V, 80A, 10Ohm, 15V
- Reverse Recovery Time (trr): 85 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4
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