IPB180P04P4L02ATMA2
Infineon Technologies
Infineon Technologies
MOSFET P-CH 40V 180A TO263-7
$4.95
Available to order
Reference Price (USD)
1+
$4.95000
500+
$4.9005
1000+
$4.851
1500+
$4.8015
2000+
$4.752
2500+
$4.7025
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPB180P04P4L02ATMA2 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPB180P04P4L02ATMA2 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 410µA
- Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V
- Vgs (Max): +5V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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