IPI029N06NAKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 24A/100A TO262-3
$2.66
Available to order
Reference Price (USD)
1+
$2.11000
10+
$1.90600
100+
$1.53150
500+
$1.19120
1,000+
$0.98699
Exquisite packaging
Discount
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Discover IPI029N06NAKSA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 75µA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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