SUD19P06-60-BE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 60V 18.3A DPAK
$1.23
Available to order
Reference Price (USD)
1+
$1.23000
500+
$1.2177
1000+
$1.2054
1500+
$1.1931
2000+
$1.1808
2500+
$1.1685
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SUD19P06-60-BE3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SUD19P06-60-BE3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 18.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 38.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Microchip Technology
APT6011B2VRG
Diodes Incorporated
DMN2004TK-7
STMicroelectronics
SCT10N120
onsemi
FDB3682
Diodes Incorporated
DMN6022SSS-13
NTE Electronics, Inc
NTE2373
Nexperia USA Inc.
BUK7Y72-80EX
onsemi
NTTFS4930NTWG
Vishay Siliconix
IRFU110PBF
Texas Instruments