SCT10N120
STMicroelectronics
STMicroelectronics
SICFET N-CH 1200V 12A HIP247
$12.35
Available to order
Reference Price (USD)
1+
$12.85000
10+
$11.88900
100+
$10.19260
600+
$9.17490
1,200+
$8.49642
Exquisite packaging
Discount
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Optimize your electronic systems with SCT10N120, a high-quality Transistors - FETs, MOSFETs - Single from STMicroelectronics. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SCT10N120 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™
- Package / Case: TO-247-3
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