IPN95R2K0P7ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 950V 4A SOT223
$1.39
Available to order
Reference Price (USD)
3,000+
$0.50049
6,000+
$0.47821
15,000+
$0.46230
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IPN95R2K0P7ATMA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IPN95R2K0P7ATMA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 950 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 1.7A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223
- Package / Case: TO-261-4, TO-261AA
Related Products
Vishay Siliconix
SI2399DS-T1-GE3
Vishay Siliconix
SQS411ENW-T1_GE3
Harris Corporation
HUF75339P3
Nexperia USA Inc.
BUK9M14-40EX
Toshiba Semiconductor and Storage
SSM3J66MFV,L3F
Diodes Incorporated
DMT67M8LK3-13
IXYS
IXTA36P15P
Rectron USA
RM50N60T2
GeneSiC Semiconductor
G3R160MT17D
Panjit International Inc.