IPP020N08N5AKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 120A TO220-3
$7.13
Available to order
Reference Price (USD)
1+
$6.67000
10+
$5.99500
100+
$4.98580
500+
$4.11102
1,000+
$3.52782
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPP020N08N5AKSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPP020N08N5AKSA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 280µA
- Gate Charge (Qg) (Max) @ Vgs: 223 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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