IPW65R080CFDFKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 700V 43.3A TO247-3
$12.26
Available to order
Reference Price (USD)
1+
$9.90000
10+
$8.97800
240+
$7.49558
720+
$6.38388
1,200+
$5.64274
Exquisite packaging
Discount
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Enhance your circuit performance with IPW65R080CFDFKSA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPW65R080CFDFKSA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 17.6A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.76mA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5030 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 391W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
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