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IRFR430BTM

Fairchild Semiconductor
IRFR430BTM Preview
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
$0.25
Available to order
Reference Price (USD)
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$0.25000
500+
$0.2475
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$0.245
1500+
$0.2425
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$0.24
2500+
$0.2375
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.75A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252-3 (DPAK)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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